IDW10G65C5 datasheet, diodes equivalent, Infineon Technologies

Features and benefits

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

Application

* Breakdown voltage tested at 22 mA2)
* Optimized for high temperature operation Benefits
* System efficienc.

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resultin.

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